| 1. | Fourthly , the incident intensity threshold of the fanning effect in twm was measured in the ce : knsbn crystal , and it is about 20mw / cm , while using 632 . 8nm red light with e polarization as writing beam 实验发现在e偏振光写入情况下, ce : knsbn晶体中光扇存在写入光强度阈值特性,当写入光强大于20mw cm ~ 2时光扇效应明显增强。 |